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Width: 6.22 mm
Height: 2.38 mm
Length: 6.73 mm
Fall Time: 4.4 ns, 8 ns
Rise Time: 20.5 ns, 20.3 ns
Technology: Si
Unit Weight: 330 mg
Channel Mode: Enhancement
REACH - SVHC: Details
Configuration: Single
Mounting Style: SMD/SMT
Transistor Type: 1 N-Channel
Qg - Gate Charge: 26 nC
Number of Channels: 1 Channel
Transistor Polarity: N-Channel
Pd - Power Dissipation: 2.24 W
Vgs - Gate-Source Voltage: - 20 V, + 20 V
Typical Turn-On Delay Time: 10.8 ns, 17.2 ns
Typical Turn-Off Delay Time: 30.8 ns, 20.8 ns
Id - Continuous Drain Current: 88 A
Maximum Operating Temperature: + 175 C
Minimum Operating Temperature: - 55 C
Forward Transconductance - Min: 17 S
Rds On - Drain-Source Resistance: 5 mOhms
Vds - Drain-Source Breakdown Voltage: 30 V
Vgs th - Gate-Source Threshold Voltage: 1.5 V
