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Width: 1.65 mm
Height: 1.05 mm
Length: 3.05 mm
Fall Time: 1.5 ns, 12.4 ns
Rise Time: 10.7 ns, 11.7 ns
Technology: Si
Unit Weight: 85 mg
Channel Mode: Enhancement
Configuration: Dual
Mounting Style: SMD/SMT
Transistor Type: 1 N-Channel, 1 P-Channel
Qg - Gate Charge: 2.3 nC, 7.4 nC
Number of Channels: 2 Channel
Transistor Polarity: N-Channel, P-Channel
Pd - Power Dissipation: 3.1 W
Vgs - Gate-Source Voltage: - 12 V, + 12 V, - 8 V, + 8 V
Typical Turn-On Delay Time: 6.3 ns, 5.8 ns
Typical Turn-Off Delay Time: 9.6 ns, 16 ns
Id - Continuous Drain Current: 3.9 A, 3.2 A
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 55 C
Forward Transconductance - Min: 6 S, 8 S
Rds On - Drain-Source Resistance: 80 mOhms, 110 mOhms
Vds - Drain-Source Breakdown Voltage: 20 V
Vgs th - Gate-Source Threshold Voltage: 600 mV, 450 mV
