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Width: 1.65 mm
Height: 1.05 mm
Length: 3.05 mm
Fall Time: 15.9 ns, 16.9 ns
Rise Time: 15.9 ns, 16.9 ns
Technology: Si
Unit Weight: 85 mg
Channel Mode: Enhancement
Configuration: Dual
Mounting Style: SMD/SMT
Transistor Type: 1 N-Channel, 1 P-Channel
Qg - Gate Charge: 7.9 nC, 8.9 nC
Number of Channels: 2 Channel
Transistor Polarity: N-Channel, P-Channel
Pd - Power Dissipation: 600 mW
Vgs - Gate-Source Voltage: - 8 V, + 8 V
Typical Turn-On Delay Time: 7.2 ns, 6.4 ns
Typical Turn-Off Delay Time: 16.4 ns, 15.7 ns
Id - Continuous Drain Current: 5.5 A
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 55 C
Forward Transconductance - Min: 7.7 S, 5.9 S
Rds On - Drain-Source Resistance: 45 mOhms, 80 mOhms
Vds - Drain-Source Breakdown Voltage: 20 V
Vgs th - Gate-Source Threshold Voltage: 400 mV, 1.2 V
