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Type: Power MOSFET
Vgs(th): 1.2 V
Vgs (Max): 12V
Gate Charge (Qg): 4nC
Power consumption: 910mW
Technology System: MOSFET(Metal Oxide)
Drain to Source voltage: 20V
Continuous drain current: 2.9A
Input Capacitance (Ciss): 300pF
Operating temperature range: -55 to 150C
Field-effect transistor type: N-CH
Drain to Source on-state resistance: 80mOhm
Drive Voltage (Max Rds On, Min Rds On): 2.5|4.5V
