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Width: 1.65 mm
Height: 1.05 mm
Length: 3.05 mm
Fall Time: 28 ns
Rise Time: 28 ns
Technology: Si
Unit Weight: 85 mg
Channel Mode: Enhancement
Configuration: Single
Mounting Style: SMD/SMT
Transistor Type: 1 P-Channel
Qg - Gate Charge: 35 nC
Number of Channels: 1 Channel
Transistor Polarity: P-Channel
Pd - Power Dissipation: 1.3 W
Vgs - Gate-Source Voltage: - 8 V, + 8 V
Typical Turn-On Delay Time: 8 ns
Typical Turn-Off Delay Time: 75 ns
Id - Continuous Drain Current: 6.7 A
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 55 C
Forward Transconductance - Min: 15 S
Rds On - Drain-Source Resistance: 42 mOhms
Vds - Drain-Source Breakdown Voltage: 20 V
Vgs th - Gate-Source Threshold Voltage: 1.5 V
