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Width: 1.25 mm
Height: 0.9 mm
Length: 2 mm
Fall Time: 78 ns, 3.5 ns
Rise Time: 66 ns, 6.5 ns
Technology: Si
Unit Weight: 7.500 mg
Channel Mode: Enhancement
Configuration: Dual
Mounting Style: SMD/SMT
Transistor Type: 1 N-Channel, 1 P-Channel
Qg - Gate Charge: 900 pC, 2.2 nC
Number of Channels: 2 Channel
Transistor Polarity: N-Channel, P-Channel
Pd - Power Dissipation: 270 mW
Vgs - Gate-Source Voltage: - 20 V, + 20 V, - 12 V, + 12 V
Typical Turn-On Delay Time: 15 ns, 5.8 ns
Typical Turn-Off Delay Time: 56 ns, 13.5 ns
Id - Continuous Drain Current: 250 mA, 880 mA
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 55 C
Forward Transconductance - Min: 0.08 S, 3 S
Rds On - Drain-Source Resistance: 1.5 Ohms, 500 mOhms
Vds - Drain-Source Breakdown Voltage: 30 V, 20 V
Vgs th - Gate-Source Threshold Voltage: 800 mV, 450 mV
