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Width: 1.25 mm
Height: 0.9 mm
Length: 2 mm
Fall Time: 1.5 ns
Rise Time: 1.5 ns
Technology: Si
Channel Mode: Enhancement
Configuration: Single
Mounting Style: SMD/SMT
Transistor Type: 1 P-Channel
Number of Channels: 1 Channel
Transistor Polarity: P-Channel
Pd - Power Dissipation: 625 mW
Vgs - Gate-Source Voltage: - 12 V, + 12 V
Typical Turn-On Delay Time: 0.86 ns
Typical Turn-Off Delay Time: 3.5 ns
Id - Continuous Drain Current: 3.3 A
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 55 C
Forward Transconductance - Min: 15 S
Rds On - Drain-Source Resistance: 133 mOhms
Vds - Drain-Source Breakdown Voltage: 12 V
