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Fall Time: 23.5 ns, 7.3 ns
Rise Time: 30.7 ns, 21.5 ns
Technology: Si
Channel Mode: Enhancement
REACH - SVHC: Details
Configuration: Dual
Mounting Style: SMD/SMT
Transistor Type: 2 N-Channel
Qg - Gate Charge: 7.9 nC, 43 nC
Number of Channels: 2 Channel
Transistor Polarity: N-Channel
Pd - Power Dissipation: 25 W, 41 W
Vgs - Gate-Source Voltage: - 20 V, + 20 V, - 12 V, + 16 V
Typical Turn-On Delay Time: 36 ns, 12.6 ns
Typical Turn-Off Delay Time: 64.7 ns, 17.5 ns
Id - Continuous Drain Current: 57 A, 165 A
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 55 C
Forward Transconductance - Min: 93 S, 248 S
Vds - Drain-Source Breakdown Voltage: 30 V
Vgs th - Gate-Source Threshold Voltage: 3 V
