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FET Feature: Standard
Mounting Type: Surface Mount
Power-Maximum: 1.1W
Operating temperature: -55 to 150C
Drain to Source voltage: 30V
Continuous drain current: 11.3A/18.1A
Current - Drain (Id) (25°C): 11.3|18.1A
Field-effect transistor type: 2N-Channel(Dual)Asymmetrical
Gate Charge - (when applying Vgs): 22.2nC@10V
On Voltage - (Vgs when Id is applied): 2.2V@250uA
On Resistance - (Rds when Id,Vgs is applied): 5.4mOhm@30A|10V
Input Capacitance - (Ciss when Vds is applied): 1153pF@15V
