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Fall Time: 96 ns
Rise Time: 58 ns
Technology: Si
Unit Weight: 75 mg
Channel Mode: Enhancement
REACH - SVHC: Details
Configuration: Single
Mounting Style: SMD/SMT
Transistor Type: 1-N-Channel
Qg - Gate Charge: 18.4 nC, 40.7 nC
Number of Channels: 1 Channel
Transistor Polarity: N-Channel
Pd - Power Dissipation: 100 W
Vgs - Gate-Source Voltage: - 20 V, + 20 V
Typical Turn-On Delay Time: 15 ns
Typical Turn-Off Delay Time: 66 ns
Id - Continuous Drain Current: 133 A
Maximum Operating Temperature: + 175 C
Minimum Operating Temperature: - 55 C
Forward Transconductance - Min: 130 S
Rds On - Drain-Source Resistance: 3 mOhms
Vds - Drain-Source Breakdown Voltage: 60 V
Vgs th - Gate-Source Threshold Voltage: 1.2 V
