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Vgs(th): 2.3 V
Vgs (Max): 20V
Gate Charge (Qg): 2.5nC
Power consumption: 400mW
Technology System: MOSFET(Metal Oxide)
Drain to Source voltage: 20V
Continuous drain current: 1A
Input Capacitance (Ciss): 165pF
Operating temperature range: -55 to 150C
Field-effect transistor type: P-CH
Drain to Source on-state resistance: 180mOhm
Drive Voltage (Max Rds On, Min Rds On): 4.5|10V
