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Vgs(th): 1.4 V
Vgs (Max): 12V
Gate Charge (Qg): 4.76nC
Power consumption: 480mW
Technology System: MOSFET(Metal Oxide)
Drain to Source voltage: 30V
Input Capacitance (Ciss): 432pF
Operating temperature range: -55 to 150C
Field-effect transistor type: N-CH
Drain to Source on-state resistance: 55mOhm
Drive Voltage (Max Rds On, Min Rds On): 2.5|10V
