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Type: Power MOSFET
Vgs(th): 3 V
Vgs (Max): 20V
Gate Charge (Qg): 10nC
Power consumption: 400mW
Technology System: MOSFET(Metal Oxide)
Drain to Source voltage: 30V
Continuous drain current: 1.13A
Input Capacitance (Ciss): 200pF
Operating temperature range: -55 to 150C
Field-effect transistor type: P-CH
Drain to Source on-state resistance: 200mOhm
Drive Voltage (Max Rds On, Min Rds On): 4.5|10V
