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Vgs(th): 0.7V
Vgs (Max): 8V
Gate Charge (Qg): 6.4nC
Power consumption: 290mW
Technology System: MOSFET(Metal Oxide)
Drain to Source voltage: 8V
Continuous drain current: 1.4A
Input Capacitance (Ciss): 640pF
Operating temperature range: -55 to 150C
Field-effect transistor type: P-CH
Drain to Source on-state resistance: 100mOhm
Drive Voltage (Max Rds On, Min Rds On): 1.8|4.5V
