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Width: 1.24 mm
Height: 0.85 mm
Length: 2.1 mm
Fall Time: 6.7 ns, 7.1 ns
Rise Time: 5.2 ns, 6.7 ns
Technology: Si
Unit Weight: 6.200 mg
Channel Mode: Enhancement
Configuration: Single
Mounting Style: SMD/SMT
Transistor Type: 1 P-Channel
Qg - Gate Charge: 4.8 nC
Number of Channels: 1 Channel
Transistor Polarity: P-Channel
Pd - Power Dissipation: 350 mW
Vgs - Gate-Source Voltage: - 12 V, + 12 V
Typical Turn-On Delay Time: 5.3 ns, 7.7 ns
Typical Turn-Off Delay Time: 16.2 ns, 19.9 ns
Id - Continuous Drain Current: 1.3 A
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 55 C
Forward Transconductance - Min: 3.6 S
Rds On - Drain-Source Resistance: 150 mOhms
Vds - Drain-Source Breakdown Voltage: 30 V
Vgs th - Gate-Source Threshold Voltage: 700 mV
