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Fall Time: 1.7 ns, 5.2 ns
Rise Time: 1.1 ns, 2.3 ns
Technology: Si
Channel Mode: Enhancement
Configuration: Dual
Mounting Style: SMD/SMT
Transistor Type: 1 N-Channel
Qg - Gate Charge: 12 nC, 37.5 nC
Number of Channels: 1 Channel
Transistor Polarity: N-Channel
Pd - Power Dissipation: 25 W, 36 W
Vgs - Gate-Source Voltage: - 12 V, + 16 V
Typical Turn-On Delay Time: 6.6 ns. 9.4 ns
Typical Turn-Off Delay Time: 17.3 ns, 37.6 ns
Id - Continuous Drain Current: 61 A, 126 A
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 55 C
Rds On - Drain-Source Resistance: 1.4 mOhms, 4.2 mOhms
Vds - Drain-Source Breakdown Voltage: 25 V, 25 V
Vgs th - Gate-Source Threshold Voltage: 2 V, 2 V
