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onsemi NVBG040N120SC1 Silicon Carbide (SiC) MOSFET, N-Channel - EliteSiC, 40 mohm, 1200 V, M1, D2PAK-7L Silicon Carbide MO

Name: onsemi NVBG040N120SC1 Silicon Carbide (SiC) MOSFET, N-Channel - EliteSiC, 40 mohm, 1200 V, M1, D2PAK-7L Silicon Carbide MO
Brand: onsemi

Manufactureronsemi(View more products from this manufacturer)

ModelNVBG040N120SC1

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Channel Type: N Channel

Power Dissipation: 357

Transistor Case Style: TO-263 (D2PAK)

Drain Source Voltage Vds: 1.2

Operating Temperature Max: 175 °C

Continuous Drain Current Id: 60

Drain Source On State Resistance: 56

Gate Source Threshold Voltage Max: 4.3

Datasheet