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onsemi NVBG060N090SC1 Silicon Carbide MOSFET, EliteSiC, N Channel, 44 A, 900 V, 0.043 ohm, D2PAK-7L

Name: onsemi NVBG060N090SC1 Silicon Carbide MOSFET, EliteSiC, N Channel, 44 A, 900 V, 0.043 ohm, D2PAK-7L
Brand: onsemi

ModelNVBG060N090SC1

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Channel Type: N Channel

Power Dissipation: 211

Transistor Case Style: TO-263 (D2PAK)

Drain Source Voltage Vds: 900

Operating Temperature Max: 175 °C

Continuous Drain Current Id: 44

Drain Source On State Resistance: 84

Gate Source Threshold Voltage Max: 4.3

Datasheet