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onsemi NVH4L080N120SC1 Silicon Carbide (SiC) MOSFET, N-Channel - EliteSiC, 80 mohm, 1200 V, M1, TO247-4L Silicon Carbide MO

Name: onsemi NVH4L080N120SC1 Silicon Carbide (SiC) MOSFET, N-Channel - EliteSiC, 80 mohm, 1200 V, M1, TO247-4L Silicon Carbide MO
Brand: onsemi

Manufactureronsemi(View more products from this manufacturer)

ModelNVH4L080N120SC1

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Channel Type: N Channel

Power Dissipation: 170

Transistor Case Style: TO-247

Drain Source Voltage Vds: 1.2

Operating Temperature Max: 175 °C

Continuous Drain Current Id: 29

Drain Source On State Resistance: 110

Gate Source Threshold Voltage Max: 4.3

Datasheet