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onsemi NVMFWS014P04M8LT1G MOSFETs Power MOSFET, Single P-Channel, -40 V, 13.8 mohm a. -10V, -52.1 A Wettable flank option

Name: onsemi NVMFWS014P04M8LT1G MOSFETs Power MOSFET, Single P-Channel, -40 V, 13.8 mohm a. -10V, -52.1 A Wettable flank option
Brand: onsemi

ModelNVMFWS014P04M8LT1G

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Technology: Si

Channel Mode: Enhancement

REACH - SVHC: Details

Mounting Style: SMD/SMT

Qg - Gate Charge: 26.5 nC

Number of Channels: 1 Channel

Transistor Polarity: P-Channel

Pd - Power Dissipation: 60 W

Vgs - Gate-Source Voltage: - 20 V, + 20 V

Id - Continuous Drain Current: 52.1 A

Maximum Operating Temperature: + 175 C

Minimum Operating Temperature: - 55 C

Rds On - Drain-Source Resistance: 13.8 mOhms

Vds - Drain-Source Breakdown Voltage: 40 V

Vgs th - Gate-Source Threshold Voltage: 2.4 V