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Fall Time: 7 ns
Rise Time: 12 ns
Technology: Si
Channel Mode: Enhancement
Configuration: SIngle
Mounting Style: SMD/SMT
Transistor Type: 1 N-Channel
Qg - Gate Charge: 39 nC
Transistor Polarity: N-Channel
Pd - Power Dissipation: 164 W
Vgs - Gate-Source Voltage: - 20 V, + 20 V
Typical Turn-On Delay Time: 28 ns
Typical Turn-Off Delay Time: 43 ns
Id - Continuous Drain Current: 201 A
Maximum Operating Temperature: + 175 C
Minimum Operating Temperature: - 55 C
Forward Transconductance - Min: 158 S
Rds On - Drain-Source Resistance: 1.9 mOhms
Vds - Drain-Source Breakdown Voltage: 80 V
