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onsemi NVMFWS3D0P04M8LT1G MOSFETs Power MOSFET, Single P-Channel, -40 V, 2.7 mohm, -183 A Wettable Option

Name: onsemi NVMFWS3D0P04M8LT1G MOSFETs Power MOSFET, Single P-Channel, -40 V, 2.7 mohm, -183 A Wettable Option
Brand: onsemi

ModelNVMFWS3D0P04M8LT1G

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Technology: Si

Channel Mode: Enhancement

REACH - SVHC: Details

Mounting Style: SMD/SMT

Qg - Gate Charge: 124 nC

Number of Channels: 1 Channel

Transistor Polarity: P-Channel

Pd - Power Dissipation: 171 W

Vgs - Gate-Source Voltage: - 20 V, + 20 V

Id - Continuous Drain Current: 183 A

Maximum Operating Temperature: + 175 C

Minimum Operating Temperature: - 55 C

Rds On - Drain-Source Resistance: 2.7 mOhms

Vds - Drain-Source Breakdown Voltage: 40 V

Vgs th - Gate-Source Threshold Voltage: 2.4 V