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onsemi NVMJD010N10MCLTWG MOSFETs MOSFET - Power, Dual, N-Channel,100 V, 10 mohm, 62 A

Name: onsemi NVMJD010N10MCLTWG MOSFETs MOSFET - Power, Dual, N-Channel,100 V, 10 mohm, 62 A
Brand: onsemi

ModelNVMJD010N10MCLTWG

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Fall Time: 28 ns

Rise Time: 32 ns

Technology: Si

Channel Mode: Enhancement

REACH - SVHC: Details

Configuration: Dual

Mounting Style: SMD/SMT

Transistor Type: 1 N-Channel

Qg - Gate Charge: 26.4 nC

Number of Channels: 2 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 84 W

Vgs - Gate-Source Voltage: - 20 V, + 20 V

Typical Turn-On Delay Time: 8 ns

Typical Turn-Off Delay Time: 68 ns

Id - Continuous Drain Current: 62 A

Maximum Operating Temperature: + 175 C

Minimum Operating Temperature: - 55 C

Forward Transconductance - Min: 61 S

Rds On - Drain-Source Resistance: 10 mOhms

Vds - Drain-Source Breakdown Voltage: 100 V

Vgs th - Gate-Source Threshold Voltage: 3 V