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onsemi NXH100B120H3Q0PTG SiC IGBT Modules Power Integrated Module, Dual Boost, 1200 V, 50 A IGBT + 1200 V, 20 A SiC Diode. 1.6mm press-fit pins, TIM

Name: onsemi NXH100B120H3Q0PTG SiC IGBT Modules Power Integrated Module, Dual Boost, 1200 V, 50 A IGBT + 1200 V, 20 A SiC Diode. 1.6mm press-fit pins, TIM
Brand: onsemi

Manufactureronsemi(View more products from this manufacturer)

ModelNXH100B120H3Q0PTG

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Technology: SiC

Configuration: Dual

Mounting Style: Press Fit

Pd - Power Dissipation: 186 W

Gate-Emitter Leakage Current: 800 nA

Maximum Gate Emitter Voltage: 20 V

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 40 C

Collector- Emitter Voltage VCEO Max: 1.2 kV

Collector-Emitter Saturation Voltage: 1.77 V

Continuous Collector Current at 25 C: 50 A