Stay Updated with Offers

Get exclusive volume discounts, bulk pricing updates, and new product alerts delivered directly to your inbox.

By subscribing, you agree to our Terms of Service and Privacy Policy.

Quick Support

Direct access to our certified experts

onsemi NXH35C120L2C2ESG IGBT Silicon Modules TMPIM 1200V 35A ENHANCE CIB

Name: onsemi NXH35C120L2C2ESG IGBT Silicon Modules TMPIM 1200V 35A ENHANCE CIB
Brand: onsemi

ModelNXH35C120L2C2ESG

Contact

Quantity

Secure Checkout

Quality Engagement

Easy change and return

Delivery Available

Technology: Si

Configuration: 3-Phase Inverter

Gate-Emitter Leakage Current: 400 nA

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 40 C

Collector- Emitter Voltage VCEO Max: 1.2 kV

Collector-Emitter Saturation Voltage: 1.8 V

Continuous Collector Current at 25 C: 35 A