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onsemi NXH450B100H4Q2F2PG-R Si/SiC Hybrid Modules 1000V,75A FSIII IGBT, MID SPEED WITH RUGGED ANTI-PARALLEL DIODES IN PRESS FIT PINS

Name: onsemi NXH450B100H4Q2F2PG-R Si/SiC Hybrid Modules 1000V,75A FSIII IGBT, MID SPEED WITH RUGGED ANTI-PARALLEL DIODES IN PRESS FIT PINS
Brand: onsemi

Manufactureronsemi(View more products from this manufacturer)

ModelNXH450B100H4Q2F2PG-R

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Technology: SiC, Si

Configuration: Triple

Mounting Style: Press Fit

Pd - Power Dissipation: 234 W

Gate-Emitter Leakage Current: 800 nA

Maximum Gate Emitter Voltage: 20 V

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 40 C

Collector- Emitter Voltage VCEO Max: 1 kV

Collector-Emitter Saturation Voltage: 1.7 V

Continuous Collector Current at 25 C: 101 A