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onsemi NXH50C120L2C2ES1G IGBT Silicon Modules TMPIM 1200V 50A CI

Name: onsemi NXH50C120L2C2ES1G IGBT Silicon Modules TMPIM 1200V 50A CI
Brand: onsemi

ModelNXH50C120L2C2ES1G

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Technology: Si

Configuration: 3-Phase Inverter

Gate-Emitter Leakage Current: 400 nA

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 40 C

Collector- Emitter Voltage VCEO Max: 1.2 kV

Collector-Emitter Saturation Voltage: 1.8 V

Continuous Collector Current at 25 C: 50 A