Stay Updated with Offers

Get exclusive volume discounts, bulk pricing updates, and new product alerts delivered directly to your inbox.

By subscribing, you agree to our Terms of Service and Privacy Policy.

Quick Support

Direct access to our certified experts

onsemi NXH50M65L4Q1SG IGBT Modules IGBT Module, H6.5 Topology, 650 V, 50 A IGBT, 650 V, 50 A Diode Solder pins

Name: onsemi NXH50M65L4Q1SG IGBT Modules IGBT Module, H6.5 Topology, 650 V, 50 A IGBT, 650 V, 50 A Diode Solder pins
Brand: onsemi

ModelNXH50M65L4Q1SG

Contact

Quantity

Secure Checkout

Quality Engagement

Easy change and return

Delivery Available

Technology: Si

Configuration: Full Bridge

Pd - Power Dissipation: 72 W

Gate-Emitter Leakage Current: 400 nA

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 40 C

Collector- Emitter Voltage VCEO Max: 650 V

Collector-Emitter Saturation Voltage: 1.56 V

Continuous Collector Current at 25 C: 48 A