Get exclusive volume discounts, bulk pricing updates, and new product alerts delivered directly to your inbox.
By subscribing, you agree to our Terms of Service and Privacy Policy.
Direct access to our certified experts
Width: 1.3 mm
Height: 0.94 mm
Length: 2.9 mm
Technology: Si
Unit Weight: 8 mg
Configuration: Single
Qualification: AEC-Q100
Mounting Style: SMD/SMT
Transistor Polarity: PNP
Pd - Power Dissipation: 225 mW
DC Current Gain hFE Max: 160 at 100 mA, 1 V
Gain Bandwidth Product fT: 100 MHz
Emitter- Base Voltage VEBO: 5 V
Collector- Base Voltage VCBO: 50 V
Maximum DC Collector Current: 500 mA
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 55 C
DC Collector/Base Gain hfe Min: 160 at 100 mA, 1 V, 40 at 500 mA, 1 V
Collector- Emitter Voltage VCEO Max: 45 V
Collector-Emitter Saturation Voltage: 700 mV
