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onsemi SBC847BPDW1T3G BJTs - Bipolar Transistors 100 mA 45 V, Co-packaged NPN and PNP Bipolar Junction Transistor

Name: onsemi SBC847BPDW1T3G BJTs - Bipolar Transistors 100 mA 45 V, Co-packaged NPN and PNP Bipolar Junction Transistor
Brand: onsemi

ModelSBC847BPDW1T3G

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Technology: Si

Unit Weight: 7.500 mg

Configuration: Dual

Qualification: AEC-Q101

Mounting Style: SMD/SMT

Transistor Polarity: NPN, PNP

Pd - Power Dissipation: 380 mW

DC Current Gain hFE Max: 450 at 2 mA, 5 V

Gain Bandwidth Product fT: 100 MHz

Emitter- Base Voltage VEBO: 6 V

Collector- Base Voltage VCBO: 50 V

Maximum DC Collector Current: 100 mA

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

DC Collector/Base Gain hfe Min: 200 at 2 mA, 5 V

Collector- Emitter Voltage VCEO Max: 45 V

Collector-Emitter Saturation Voltage: 600 mV, 650 mV