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Type: Power MOSFET
Vgs (Max): 10V
Gate Charge (Qg): 3.1nC
Power consumption: 800mW
Technology System: MOSFET(Metal Oxide)
Drain to Source voltage: 12V
Continuous drain current: 2.5A
Input Capacitance (Ciss): 270pF
Operating temperature range: 150C
Field-effect transistor type: P-CH
Drain to Source on-state resistance: 112mOhm
Drive Voltage (Max Rds On, Min Rds On): 1.8|4.5V
