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onsemi UF3C120080B7S Silicon Carbide MOSFET, Single, N Channel, 28.8 A, 1.2 kV, 105 Milliohms, TO-263 (D2PAK), 7 Pins

Name: onsemi UF3C120080B7S Silicon Carbide MOSFET, Single, N Channel, 28.8 A, 1.2 kV, 105 Milliohms, TO-263 (D2PAK), 7 Pins
Brand: onsemi

ModelUF3C120080B7S

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No. of Pins: 7

Channel Type: N Channel

Power Dissipation: 190 W

RDS(ON) Test Voltage: 12 V

Transistor Case Style: TO-263 (D2PAK)

Drain Source Voltage Vds: 1.2 kV

Operating Temperature Max: 175 °C

Continuous Drain Current Id: 28.8 A

Mosfet Module Configuration: Single

Drain Source On State Resistance: 105 mOhm

Gate Source Threshold Voltage Max: 6 V