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No. of Pins: 8
Channel Type: N Channel
Power Dissipation: 600 W
RDS(ON) Test Voltage: 12 V
Transistor Case Style: MO-299
Drain Source Voltage Vds: 750 V
Operating Temperature Max: 175 °C
Continuous Drain Current Id: 106 A
Mosfet Module Configuration: Single
Drain Source On State Resistance: 11.4 mOhm
Gate Source Threshold Voltage Max: 5.5 V
