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Gain: 22.5 dB
Technology: GaN-on-SiC
Output Power: 1.8 kW
Mounting Style: Screw Mount
Moisture Sensitive: Yes
Number of Channels: 2 Channel
Transistor Polarity: Dual N-Channel
Pd - Power Dissipation: 685 W
Vgs - Gate-Source Voltage: - 2.8 V
Maximum Operating Frequency: 1.215 GHz
Minimum Operating Frequency: 960 MHz
Id - Continuous Drain Current: 28 A
Maximum Operating Temperature: + 85 C
Minimum Operating Temperature: - 40 C
Vds - Drain-Source Breakdown Voltage: 65 V
