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Gain: 18.4 dB
Technology: GaN
Output Power: 24 W
Mounting Style: SMD/SMT
Transistor Type: HEMT
Moisture Sensitive: Yes
Transistor Polarity: N-Channel
Pd - Power Dissipation: 117 W
Maximum Drain Gate Voltage: - 2.9 V
Maximum Operating Frequency: 3.3 GHz
Id - Continuous Drain Current: 12 A
Vds - Drain-Source Breakdown Voltage: 36 V
