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Gain: 15 dB
Technology: GaN
Unit Weight: 7.396 g
Output Power: 10 W
Configuration: Single
Mounting Style: SMD/SMT
Development Kit: T2G6000528-Q3-EVB1, T2G6000528-Q3-EVB3, T2G6000528-Q3-EVB5
Transistor Type: HEMT
Moisture Sensitive: Yes
Transistor Polarity: N-Channel
Pd - Power Dissipation: 12.5 W
Maximum Operating Frequency: 6 GHz
Minimum Operating Frequency: 0 Hz
Id - Continuous Drain Current: 650 mA
