Get exclusive volume discounts, bulk pricing updates, and new product alerts delivered directly to your inbox.
By subscribing, you agree to our Terms of Service and Privacy Policy.
Direct access to our certified experts
Gain: 17.1 dB
Technology: GaN
Unit Weight: 6.745 g
Output Power: 11 W
Configuration: Single
Mounting Style: SMD/SMT
Development Kit: TGF3015-SM-EVB1
Transistor Type: HEMT
Moisture Sensitive: Yes
Transistor Polarity: N-Channel
Pd - Power Dissipation: 15.3 W
Maximum Operating Frequency: 3 GHz
Minimum Operating Frequency: 30 MHz
Id - Continuous Drain Current: 557 mA
Vgs - Gate-Source Breakdown Voltage: - 2.7 V
Vds - Drain-Source Breakdown Voltage: 32 V
