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Width: 6.1 mm
Height: 2.65 mm
Length: 6.5 mm
Fall Time: 65 ns
Rise Time: 5 ns
Technology: Si
Unit Weight: 330 mg
Channel Mode: Enhancement
Configuration: Single
Mounting Style: SMD/SMT
Transistor Type: P-Channel MOS Field Effect Transistor
Qg - Gate Charge: 23 nC
Number of Channels: 1 Channel
Transistor Polarity: P-Channel
Pd - Power Dissipation: 30 W
Vgs - Gate-Source Voltage: - 20 V, + 20 V
Typical Turn-On Delay Time: 7 ns
Typical Turn-Off Delay Time: 100 ns
Id - Continuous Drain Current: 15 A
Maximum Operating Temperature: + 175 C
Rds On - Drain-Source Resistance: 40 mOhms
Vds - Drain-Source Breakdown Voltage: 40 V
Vgs th - Gate-Source Threshold Voltage: 2.5 V
