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Width: 6.1 mm
Height: 2.3 mm
Length: 6.5 mm
Fall Time: 150 ns
Rise Time: 15 ns
Technology: Si
Channel Mode: Enhancement
Configuration: Single
Mounting Style: SMD/SMT
Transistor Type: 1 P-Channel
Qg - Gate Charge: 100 nC
Number of Channels: 1 Channel
Transistor Polarity: P-Channel
Pd - Power Dissipation: 84 W
Vgs - Gate-Source Voltage: - 20 V, + 20 V
Typical Turn-On Delay Time: 11 ns
Typical Turn-Off Delay Time: 250 ns
Id - Continuous Drain Current: 50 A
Maximum Operating Temperature: + 150 C
Forward Transconductance - Min: 12 S
Rds On - Drain-Source Resistance: 9.6 mOhms
Vds - Drain-Source Breakdown Voltage: 40 V
Vgs th - Gate-Source Threshold Voltage: 2.5 V
