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Width: 10 mm
Height: 4.5 mm
Length: 15 mm
Fall Time: 5.3 ns
Rise Time: 4.6 ns
Technology: Si
Channel Mode: Enhancement
Mounting Style: Through Hole
Transistor Type: 1 N-Channel
Qg - Gate Charge: 20 nC
Number of Channels: 1 Channel
Transistor Polarity: N-Channel
Pd - Power Dissipation: 125 W
Vgs - Gate-Source Voltage: - 30 V, + 30 V
Typical Turn-On Delay Time: 12 ns
Typical Turn-Off Delay Time: 65 ns
Id - Continuous Drain Current: 6 A
Maximum Operating Temperature: + 150 C
Rds On - Drain-Source Resistance: 1.37 Ohms
Vds - Drain-Source Breakdown Voltage: 600 V
Vgs th - Gate-Source Threshold Voltage: 4.5 V
