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Width: 3.95 mm
Height: 1.75 mm
Length: 4.9 mm
Fall Time: 5.1 ns
Rise Time: 3.7 ns
Technology: Si
Channel Mode: Enhancement
Mounting Style: SMD/SMT
Transistor Type: 2 N-Channel
Qg - Gate Charge: 13.4 nC
Number of Channels: 2 Channel
Transistor Polarity: N-Channel
Pd - Power Dissipation: 850 mW
Vgs - Gate-Source Voltage: - 20 V, + 20 V
Typical Turn-On Delay Time: 8.5 ns
Typical Turn-Off Delay Time: 30 ns
Id - Continuous Drain Current: 5 A
Maximum Operating Temperature: + 150 C
Forward Transconductance - Min: 2.5 S
Rds On - Drain-Source Resistance: 56 mOhms
Vds - Drain-Source Breakdown Voltage: 60 V
Vgs th - Gate-Source Threshold Voltage: 2.5 V
