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Technology: Si
Unit Weight: 2 g
Configuration: Single
Mounting Style: Through Hole
Transistor Polarity: PNP
Pd - Power Dissipation: 2 W
DC Current Gain hFE Max: 320
Gain Bandwidth Product fT: 80 MHz
Emitter- Base Voltage VEBO: 5 V
Collector- Base Voltage VCBO: 100 V
Continuous Collector Current: - 12 A
Maximum DC Collector Current: 12 A
Maximum Operating Temperature: + 150 C
DC Collector/Base Gain hfe Min: 160
Collector- Emitter Voltage VCEO Max: 60 V
Collector-Emitter Saturation Voltage: 300 mV
