Get exclusive volume discounts, bulk pricing updates, and new product alerts delivered directly to your inbox.
By subscribing, you agree to our Terms of Service and Privacy Policy.
Direct access to our certified experts
Technology: Si
Unit Weight: 30 mg
Configuration: Single
Mounting Style: SMD/SMT
Transistor Polarity: PNP
Pd - Power Dissipation: 200 mW
DC Current Gain hFE Max: 500 at - 100 mA, - 2 V
Gain Bandwidth Product fT: 520 MHz
Emitter- Base Voltage VEBO: 6 V
Collector- Base Voltage VCBO: 30 V
Continuous Collector Current: - 500 mA
Maximum Operating Temperature: + 150 C
DC Collector/Base Gain hfe Min: 200 at - 100 mA, - 2 V
Collector- Emitter Voltage VCEO Max: 30 V
Collector-Emitter Saturation Voltage: 400 mV
