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Width: 2.5 mm
Height: 1.5 mm
Length: 4.5 mm
Technology: Si
Unit Weight: 130.500 mg
Configuration: Single
Mounting Style: SMD/SMT
Transistor Polarity: PNP
Pd - Power Dissipation: 500 mW
DC Current Gain hFE Max: 390
Gain Bandwidth Product fT: 240 MHz
Emitter- Base Voltage VEBO: 6 V
Collector- Base Voltage VCBO: 20 V
Continuous Collector Current: - 3 A
Maximum DC Collector Current: 3 A
Maximum Operating Temperature: + 150 C
DC Collector/Base Gain hfe Min: 120
Collector- Emitter Voltage VCEO Max: 20 V
Collector-Emitter Saturation Voltage: 500 mV
