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Width: 1.3 mm
Height: 0.95 mm
Length: 2.9 mm
Technology: Si
Unit Weight: 8 mg
Configuration: Single
Mounting Style: SMD/SMT
Transistor Polarity: PNP
Pd - Power Dissipation: 200 mW
DC Current Gain hFE Max: 460
Gain Bandwidth Product fT: 180 MHz
Collector- Base Voltage VCBO: 32 V
Continuous Collector Current: 200 mA
Maximum DC Collector Current: 200 mA
Maximum Operating Temperature: + 150 C
DC Collector/Base Gain hfe Min: 250
Collector- Emitter Voltage VCEO Max: 32 V
