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Width: 1.3 mm
Height: 0.95 mm
Length: 2.9 mm
Technology: Si
Unit Weight: 30 mg
Configuration: Single
Mounting Style: SMD/SMT
Transistor Polarity: PNP
Pd - Power Dissipation: 425 mW
DC Current Gain hFE Max: 600 at - 500 mA, - 1 V
Gain Bandwidth Product fT: 200 MHz
Emitter- Base Voltage VEBO: 5 V
Collector- Base Voltage VCBO: 50 V
Continuous Collector Current: - 500 mA
Maximum Operating Temperature: + 150 C
DC Collector/Base Gain hfe Min: 40 at - 500 mA, - 1 V
Collector- Emitter Voltage VCEO Max: 45 V
Collector-Emitter Saturation Voltage: 620 mV
