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Technology: Si
Unit Weight: 2.012 g
Configuration: Single
Mounting Style: SMD/SMT
Transistor Polarity: PNP
Pd - Power Dissipation: 350 mW
DC Current Gain hFE Max: 680 at - 1 mA, - 2 V
Gain Bandwidth Product fT: 320 MHz
Emitter- Base Voltage VEBO: 6 V
Collector- Base Voltage VCBO: 30 V
Continuous Collector Current: - 1 A
Maximum Operating Temperature: + 150 C
DC Collector/Base Gain hfe Min: 90 at - 1 mA, - 2 V
Collector- Emitter Voltage VCEO Max: 30 V
Collector-Emitter Saturation Voltage: 380 mV
