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Technology: Si
Unit Weight: 38.131 mg
Configuration: Dual
Qualification: AEC-Q101
Mounting Style: SMD/SMT
Transistor Polarity: NPN, PNP
Pd - Power Dissipation: 150 mW
DC Current Gain hFE Max: 600
Gain Bandwidth Product fT: 250 MHz
Emitter- Base Voltage VEBO: 5 V
Collector- Base Voltage VCBO: 50 V
Continuous Collector Current: 100 mA
Maximum DC Collector Current: 100 mA
Maximum Operating Temperature: + 150 C
DC Collector/Base Gain hfe Min: 100
Collector- Emitter Voltage VCEO Max: 50 V
Collector-Emitter Saturation Voltage: 300 mV
