Get exclusive volume discounts, bulk pricing updates, and new product alerts delivered directly to your inbox.
By subscribing, you agree to our Terms of Service and Privacy Policy.
Direct access to our certified experts
Technology: Si
Unit Weight: 3 mg
Configuration: Dual
Mounting Style: SMD/SMT
Transistor Polarity: PNP
Pd - Power Dissipation: 150 mW
DC Current Gain hFE Max: 560 at - 1 mA, - 2 V
Gain Bandwidth Product fT: 350 MHz
Emitter- Base Voltage VEBO: 5 V
Collector- Base Voltage VCBO: 20 V
Continuous Collector Current: - 200 mA
Maximum Operating Temperature: + 150 C
DC Collector/Base Gain hfe Min: 120 at - 1 mA, - 2 V
Collector- Emitter Voltage VCEO Max: 20 V
Collector-Emitter Saturation Voltage: 300 mV
