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Vgs(th): 1.5 V
Vgs (Max): 12V
Gate Charge (Qg): 6.4nC
Power consumption: 950mW
Technology System: MOSFET(Metal Oxide)
Drain to Source voltage: 30V
Continuous drain current: 3.5A
Input Capacitance (Ciss): 285pF
Operating temperature range: 150C
Field-effect transistor type: N-CH
Drain to Source on-state resistance: 54mOhm
Drive Voltage (Max Rds On, Min Rds On): 2.5|4.5V
